Isothermal close space sublimation for II-VI semiconductor filling of porous matrices
| Autor: | Claudia de Melo, Aurelio Climent-Font, Osvaldo de Melo, Fernando Argulló-Rueda, Vicente Torres-Costa |
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| Přispěvatelé: | UAM. Departamento de Física Aplicada |
| Rok vydání: | 2012 |
| Předmět: |
Diffraction
Materials science Thin films Nanotechnology Porous silicon Isothermal process 81.15.Kk symbols.namesake Materials Science(all) Rutherford backscattering spectroscopy General Materials Science Thin film Porosity 82.80.Yc Nano Express Condensed matter physics business.industry Física II-VI semiconductors Condensed Matter Physics Nanostructures Semiconductor symbols 81.05.Rm Sublimation (phase transition) business Raman scattering |
| Zdroj: | Digital.CSIC. Repositorio Institucional del CSIC instname ResearcherID Biblos-e Archivo. Repositorio Institucional de la UAM Nanoscale Research Letters |
| DOI: | 10.1186/1556-276X-7-409 |
| Popis: | Isothermal close space sublimation, a simple and low-cost physical vapour transport technique, was used to infiltrate ZnTe and CdSe semiconductors in porous silicon. The structure of the embedded materials was determined by X-ray diffraction analysis while Rutherford backscattering spectra allowed determining the composition profiles of the samples. In both cases, a constant composition of the II-VI semiconductors throughout the porous layer down to the substrate was found. Resonance Raman scattering of the ZnTe samples indicates that this semiconductor grows in nanostructured form inside the pores. Results presented in this paper suggest that isothermal close space sublimation is a promising technique for the conformal growth of II-VI semiconductors in porous silicon. Osvaldo de Melo and Vicente Torres-Costa acknowledge the support given by the agreement between the University of Havana and the Autonomous University of Madrid. Research funding has been provided by projects MAT2008-06858-C02-02 (Spain) and Consolider FUNCOAT CSD2008-00023 (Spain). |
| Databáze: | OpenAIRE |
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