Realization of defect-free epitaxial core-shell GAAs/AlGaAs nanowire heterostructures
| Autor: | Sung Keun Lim, Lawrence F. Allard, Silvija Gradečak, Michael J. Tambe, Matthew J. Smith |
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| Jazyk: | angličtina |
| Rok vydání: | 2008 |
| Předmět: |
Electron mobility
Materials science Physics and Astronomy (miscellaneous) Scanning electron microscope business.industry Nanowire Shell (structure) Heterojunction Epitaxy Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Gallium arsenide Crystallography chemistry.chemical_compound Condensed Matter::Materials Science chemistry Scanning transmission electron microscopy Physics::Atomic and Molecular Clusters Optoelectronics business epitaxial core shell GaAs/AlGaAs nanowire heterostructures |
| Popis: | We report the controlled growth of vertically aligned GaAs/AlGaAs core-shell nanowires. By optimizing the shell deposition temperature and catalyst density we maintain high temperature stability and achieve defect-free epitaxial AlGaAs shell deposition with high aluminum incorporation. Energy dispersive x-ray analysis determines the shell composition to be Al0.9Ga0.1As and measures the uniformity of the shell thickness. Lattice-resolved high-angle annular dark-field scanning transmission electron microscopy images confirm the core-shell interface to be defect-free, epitaxial, and atomically sharp. The ability to realize GaAs/AlGaAs core-shell nanowires with precise control over the morphology and composition is essential to the development of nanowire-based high mobility electronics. |
| Databáze: | OpenAIRE |
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