High Rectification Ratio in Polymer Diode Rectifier through Interface Engineering with Self-Assembled Monolayer

Autor: Sébastien Pecqueur, Ramzi Bourguiga, David Guerin, Kamal Lmimouni, Khaoula Ferchichi
Přispěvatelé: Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Nanostructures, nanoComponents & Molecules - IEMN (NCM - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Faculté des Sciences de Bizerte [Université de Carthage], Université de Carthage - University of Carthage, Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), This research work has been partially undertaken with the support of IEMN fabrication (CMNF) and characterization (PCMP) facilities. We thank the French National Nanofabrication Network RENATECH, and the IEMN cleanroom staff for their support. We also thank CENTEXBEL for the release paper supply., PCMP PCP, Renatech Network, CMNF, ANR-17-CE24-0013,CONTEXT,Textiles connectés pour les communications autour du corps humain(2017)
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Zdroj: Electronic Materials, Vol 2, Iss 30, Pp 445-453 (2021)
Electronic Materials
Electronic Materials, 2021, 2 (4), pp.445-453. ⟨10.3390/electronicmat2040030⟩
Volume 2
Issue 4
Pages 30-453
ISSN: 2673-3978
Popis: International audience; In this work, we demonstrate P3HT (poly 3-hexylthiophene) organic rectifier diode both in rigid and flexible substrate with a rectification ratio up to 106. This performance has been achieved through tuning the work function of gold with a self-assembled monolayer of 2,3,4,5,6-pentafluorobenzenethiol (PFBT). The diode fabricated on flexible paper substrate shows a very good electrical stability under bending tests and the frequency response is estimated at more than 20 MHz which is sufficient for radio frequency identification (RFID) applications. It is also shown that the low operating voltage of this diode can be a real advantage for use in a rectenna for energy harvesting systems. Simulations of the diode structure show that it can be used at GSM and Wi-Fi frequencies if the diode capacitance is reduced to a few pF and its series resistance to a few hundred ohms. Under these conditions, the DC voltages generated by the rectenna can reach a value up to 1 V.
Databáze: OpenAIRE