Electron field emission from excimer laser crystallized amorphous silicon
Autor: | B. O. Boskovic, Y. F. Tang, S. R. P. Silva, M. J. Rose, John Martin Shannon |
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Rok vydání: | 2002 |
Předmět: |
Amorphous silicon
Field emission display Materials science Physics and Astronomy (miscellaneous) Excimer laser Silicon business.industry medicine.medical_treatment Nanocrystalline silicon chemistry.chemical_element Substrate (electronics) Laser law.invention chemistry.chemical_compound Field electron emission chemistry law medicine Optoelectronics business |
Zdroj: | Applied Physics Letters. 80:4154-4156 |
ISSN: | 1077-3118 0003-6951 |
DOI: | 10.1063/1.1482141 |
Popis: | We show field emission from excimer laser crystallized (ELC) hydrogenated amorphous silicon (a-Si:H) at current densities and threshold fields suitable for display applications. The laser crystallized a-Si:H gives rise to a densely packed and relative sharp surface morphology that gives emission currents of the order of 10−5 A (current densities≈0.04 A/cm2) at threshold fields less than 15 V/μm in a diode configuration, without the need for a forming process. With the progress in utilizing ELC in flat panel driver electronics, a fully integrated field emission display on a single glass substrate can now be envisaged. |
Databáze: | OpenAIRE |
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