Electron field emission from excimer laser crystallized amorphous silicon

Autor: B. O. Boskovic, Y. F. Tang, S. R. P. Silva, M. J. Rose, John Martin Shannon
Rok vydání: 2002
Předmět:
Zdroj: Applied Physics Letters. 80:4154-4156
ISSN: 1077-3118
0003-6951
DOI: 10.1063/1.1482141
Popis: We show field emission from excimer laser crystallized (ELC) hydrogenated amorphous silicon (a-Si:H) at current densities and threshold fields suitable for display applications. The laser crystallized a-Si:H gives rise to a densely packed and relative sharp surface morphology that gives emission currents of the order of 10−5 A (current densities≈0.04 A/cm2) at threshold fields less than 15 V/μm in a diode configuration, without the need for a forming process. With the progress in utilizing ELC in flat panel driver electronics, a fully integrated field emission display on a single glass substrate can now be envisaged.
Databáze: OpenAIRE