The perovskite SrTiO3 on Si/SiO2 by liquid injection MOCVD
| Autor: | Laurent Auvray, Stéphane Daniele, Sandrine Lhostis, Olivier Salicio, Frederique Ducroquet, Yohann Rozier, Catherine Dubourdieu |
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| Přispěvatelé: | Laboratoire des matériaux et du génie physique (LMGP ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des technologies de la microélectronique (LTM), Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Polymères aux Interfaces (MPI), Université Paris-Est Créteil Val-de-Marne - Paris 12 (UPEC UP12)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de recherches sur la catalyse et l'environnement de Lyon (IRCELYON), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), Université d'Évry-Val-d'Essonne (UEVE), Domenget, Chahla |
| Jazyk: | angličtina |
| Rok vydání: | 2009 |
| Předmět: |
010302 applied physics
business.industry [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics 020206 networking & telecommunications 02 engineering and technology Chemical vapor deposition Dielectric 01 natural sciences law.invention Capacitor Gate oxide law Phase (matter) 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics Metalorganic vapour phase epitaxy [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics business Stoichiometry ComputingMilieux_MISCELLANEOUS Perovskite (structure) |
| Zdroj: | ECS transactions ECS transactions, 2009, France. pp.669-684 ResearcherID |
| Popis: | SrTiO3, which has a very high dielectric permittivity κ in the form of bulk material (κ ~ 300), has been considered as a potential candidate for the replacement of SiO2-based gate oxide in future CMOS transistors and as a promising dielectric for next generations of DRAM capacitors. Like all perovskite-type oxides, optimized properties require a stringent control of the composition and of the interfaces with the electrodes. Here, we address issues such as the stoichiometry control of the films synthesized by metal organic chemical vapor deposition and the interface engineering on Si/SiO2 through the precursor chemistry. The silicate layer formed at 700{degree sign}C can be minimized and even suppressed. The dielectric properties are discussed with respect to thickness and composition. Although the perovskite phase is obtained for a large range of Sr/Ti ratio in the films, optimal dielectric properties are obtained in a very narrow range for Sr-deficient films. |
| Databáze: | OpenAIRE |
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