GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3μm device applications
| Autor: | Martin D. Dawson, S.A. Smith, T. Jouhti, Handong Sun, T. F. Boggess, Kimberley C. Hall, Stephane Calvez, Kenan Gundogdu, Roberto Macaluso, M. Pessa, John-Mark Hopkins, A.H. Clark |
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| Přispěvatelé: | S CALVEZ, J-M HOPKINS, A A SMITH, AH CLARK, MACALUSO R, HD SUN, MD DAWSON, T JOUHTI AND M PESSA, K GUNDOGDU, K C HALL AND T F BOGGESS |
| Rok vydání: | 2004 |
| Předmět: |
Optical amplifier
Materials science Photoluminescence Videodisks business.industry Doping Surface emitting lasers Condensed Matter Physics Distributed Bragg reflector Laser Semiconductor laser theory Vertical-cavity surface-emitting laser law.invention Inorganic Chemistry Optical pumping semiconductor disk Optics law Materials Chemistry Optoelectronics business |
| Zdroj: | Journal of Crystal Growth. 268:457-465 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2004.04.072 |
| Popis: | We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4 mW of 1290 nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 μm VECSEL with more than 0.5 W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described. |
| Databáze: | OpenAIRE |
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