Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties
| Autor: | Gilles Ledoux, Alice Hospodková, Karla Kuldová, František Hájek, Jiri Oswald, Markéta Zíková, Tomáš Hubáček, Jiří Pangrác, Christophe Dujardin |
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| Přispěvatelé: | Institute of Physics [Prague], Czech Academy of Sciences [Prague] (CAS), Institut Lumière Matière [Villeurbanne] (ILM), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Photoluminescence 02 engineering and technology Scintillator B2. Luminescent defect band 01 natural sciences Inorganic Chemistry Condensed Matter::Materials Science 0103 physical sciences Materials Chemistry Electronic band structure Quantum well 010302 applied physics business.industry Doping [CHIM.MATE]Chemical Sciences/Material chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics A1. Low dimensional structures A3. InGaN/GaN quantum wells A3. MOVPE Optoelectronics Dislocation 0210 nano-technology business Luminescence Layer (electronics) |
| Zdroj: | Journal of Crystal Growth Journal of Crystal Growth, Elsevier, 2019, 506, pp.8-13. ⟨10.1016/j.jcrysgro.2018.10.013⟩ |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2018.10.013 |
| Popis: | International audience; In this work, the influence of Si doping position on the photoluminescence (PL) properties of InGaN/GaN quantum wells (QWs) is studied. A set of samples with different positions of Si doping with respect to the multi quantum well (MQW) active region was prepared and studied by PL, SIMS and AFM and structure band alignments were simulated. Based on our experiments and band structure simulations, we show that the dominant influence of Si doping is in modification of the tilt of the band structure. However, the minor influence of lower dislocation density or unintentional doping of a few lowest QWs in the case of a Si doped buffer layer cannot be excluded. A probable origin of the defect band luminescence and its high sensitivity to the band structure tilting is explained. Based on gained understanding, proper Si doping position for particular applications is suggested. In the case of LED structures, the n-type buffer layer and p-type capping layer help improve the emission efficiency. In the case of an InGaN/GaN MQW structure designed for scintillators, the n-type doping immediately under the MQW region is not required, since it strongly increases the QW defect band luminescence which becomes dominant in the spectrum. |
| Databáze: | OpenAIRE |
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