Gateable Suppression of Spin Relaxation in Semiconductors

Autor:	A. P. Heberle, J. R. A. Cleaver, J. S. Sandhu, Jeremy J. Baumberg
Rok vydání:	2001
Předmět:	Materials science Spin polarization Excited state Relaxation (NMR) Spinplasmonics General Physics and Astronomy Condensed Matter::Strongly Correlated Electrons Atomic physics Spectroscopy Fermi gas Motional narrowing Spin-½
Zdroj:	Physical Review Letters. 86:2150-2153
ISSN:	1079-7114 0031-9007
DOI:	10.1103/physrevlett.86.2150
Popis:	The decay of spin memory in a 2D electron gas is found to be suppressed close to the metal-insulator transition. By dynamically probing the device using ultrafast spectroscopy, relaxation of optically excited electron spin is directly measured as a function of the carrier density. Motional narrowing favors spin preservation in the maximally scattered but nonlocalized electronic states. This implies that the spin-relaxation rate can be both tuned in situ and specifically engineered in appropriate device geometries.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0311df08de9a0c1c8c6fc625a51121e4 https://doi.org/10.1103/physrevlett.86.2150 Zobrazit plný text záznamu