Solderless Leadframe Assisted Wafer-Level Packaging Technology for Power Electronics
| Autor: | Julie Widiez, Bastien Letowski, Pierre Perreau, Jean-Christophe Crebier, Perceval Coudrain, Kremena Vladimirova, Gregory Enyedi, Nicolas Rouger |
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| Přispěvatelé: | Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de Génie Electrique de Grenoble (G2ELab), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]) |
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Materials science
3D power module Stacking 02 engineering and technology metallic leadframe 01 natural sciences direct copper bonding wafer-level packaging Power electronics 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Hardware_INTEGRATEDCIRCUITS Wafer Power semiconductor device [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics 010302 applied physics solderless module business.industry 020208 electrical & electronic engineering wire bondless module Semiconductor device power electronics Power module Electrode Optoelectronics die-level packaging business Wafer-level packaging |
| Zdroj: | 2018 IEEE 68th Electronic Components and Technology Conference (ECTC) 2018 IEEE 68th Electronic Components and Technology Conference (ECTC), May 2018, San Diego, France. pp.1251-1257, ⟨10.1109/ECTC.2018.00193⟩ |
| DOI: | 10.1109/ECTC.2018.00193⟩ |
| Popis: | International audience; This paper presents a wafer-level pre-packagingtechnology for power devices. The concept consists in theimplementation of a thick 3D patterned copper leadframeensuring the interconnections of the power devices amongthem or with the other components of the converter. Themetallic leadframe is bonded between two wafers ofsemiconductor devices enabling the 3D power moduleintegration by the 3D stacking of one or multiple switchingcells. Specific technology developments are introduced,practical realizations of the concept are presented and theelectrical characterizations of the first prototypes arediscussed |
| Databáze: | OpenAIRE |
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