Electron paramagnetic resonance tagged High Resolution Excitation Spectroscopy of NV-Centers in 4H-SiC
| Autor: | H. J. von Bardeleben, Weibo Gao, B. Eble, Uwe Gerstmann, Soroush Abbasi Zargaleh, J. L. Cantin, Sophie Hameau |
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| Přispěvatelé: | Nanyang Technological University [Singapour], Institut des Nanosciences de Paris (INSP), Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), School of Physical and Mathematical Sciences, The Photonics Institute, Centre for Disruptive Photonic Technologies (CDPT) |
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Photoluminescence
Absorption spectroscopy Phonon Science::Physics [DRNTU] 02 engineering and technology 01 natural sciences Atomic Spectral line law.invention Molecular & Optical law 0103 physical sciences fine and hyperfine structure Emission spectrum [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] 010306 general physics Electron paramagnetic resonance Spectroscopy defects Physics Condensed Matter & Materials Physics 021001 nanoscience & nanotechnology Photoexcitation magneto-optical spectra Defects Quantum Information Atomic physics Fine & Hyperfine Structure 0210 nano-technology |
| Zdroj: | Physical Review B: Condensed Matter and Materials Physics (1998-2015) Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2018, 98 (21), pp.214113. ⟨10.1103/PhysRevB.98.214113⟩ |
| ISSN: | 1098-0121 1550-235X |
| Popis: | We show that electron paramagnetic resonance (EPR) tagged high resolution photoexcitation spectroscopy is a powerful method for the correlation of zero phonon photoluminescence spectra with atomic point defects. Applied to the case of NV centers in $4H$-SiC it allows to associate the photoluminescence zero phonon lines (ZPL) at 1243, 1223, 1180, and 1176 nm with the (hk, kk, hh, kh) configurations of the ${\mathrm{NV}}^{\ensuremath{-}}$centers in this material. These results lead to a revision of a previous tentative assignment. Contrary to theoretical predictions, we find that the NV centers in $4H$-SiC show a negligible Franck-Condon shift as their ZPL absorption lines are resonant with the ZPL emission lines. The high subnanometer energy resolution of this technique allows us further to resolve additional fine-structure of the ZPL lines of the axial NV centers which show a doublet structure with a splitting of 0.8 nm. Our results confirm that NV centers in $4H$-SiC provide strong competitors for sensing and qubit application due to the shift of their optical transitions into the technology compatible near-infrared region and the superior material properties of SiC. Given that single center spin readout will be realized, they are suitable for scalable nanophotonic devices compatible with optical communication network. |
| Databáze: | OpenAIRE |
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