Electronic properties of graphene/p-silicon Schottky junction
| Autor: | Antonio Di Bartolomeo, Christian Wenger, Carlos Alvarado Chavarin, Filippo Giubileo, Giuseppe Luongo |
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| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Acoustics and Ultrasonics Silicon Schottky barrier chemistry.chemical_element Thermionic emission 02 engineering and technology 01 natural sciences law.invention Rectification law 0103 physical sciences 010302 applied physics Graphene business.industry Schottky diode Heterojunction Atmospheric temperature range 021001 nanoscience & nanotechnology Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Optoelectronics 0210 nano-technology business |
| Popis: | We fabricate graphene/p-Si heterojunctions and characterize their current–voltage properties in a wide temperature range. The devices exhibit Schottky diode behaviour with a modest rectification factor up to . The Schottky parameters are estimated in the framework of the thermionic emission theory using Cheung's and Norde's methods. At room temperature, we obtain an ideality factor of about 2.5 and a Schottky barrier height of 0.18 eV, which reduces at lower temperatures. We shed light on the physical mechanisms responsible for the low barrier, discussing the p-doping of graphene caused by the transfer process, the exposure to air and the out-diffusion of boron from the Si substrate. We finally propose a band model that fully explains the experimental current–voltage features, included a plateau observed in reverse current at low temperatures. |
| Databáze: | OpenAIRE |
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