THE INFLUENCE OF WATER VAPOR ON THE SELECTIVE LOW PRESSURE CVD OF COPPER
| Autor: | J.-M. Philippoz, H. van den Bergh, T. Stumm, B. Lecohier, Bertrand Calpini |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 1991 |
| Předmět: |
010302 applied physics
inorganic chemicals effect of water vapor on) 7732-18-5 (Water) Role: USES (U water vapor CVD copper fluoroacetylacetonate platinum prenucleation copper oxidized silicon Hybrid physical-chemical vapor deposition 14781-45-4 Role: USES (Uses) (in copper vapor deposition Chemistry Inorganic chemistry 7440-50-8 (Copper) Role: PEP (Physical General Physics and Astronomy chemistry.chemical_element engineering or chemical process) PROC (Process) (film deposition of 01 natural sciences Copper complex mixtures [PHYS.HIST]Physics [physics]/Physics archives 0103 physical sciences Water vapor |
| Zdroj: | Journal de Physique IV Proceedings Journal de Physique IV Proceedings, EDP Sciences, 1991, 02 (C2), pp.C2-279-C2-286. ⟨10.1051/jp4:1991234⟩ |
| ISSN: | 1155-4339 1764-7177 |
| DOI: | 10.1051/jp4:1991234⟩ |
| Popis: | Low pressure CVD of copper from its bis-hexafluoroacetylacetonate is studied on oxidized silicon substrates locally seeded with a 2.5 Å platinum prenucleation film. Copper is deposited selectively on top of the prenucleation layer from the gaseous metalorganic compound diluted in hydrogen. The selectivity, growth rate and resistivity of the copper deposit strongly depend on the presence of water vapor in the reagent gas mixture. |
| Databáze: | OpenAIRE |
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