Rare-earth oxide thin films for gate dielectrics in microelectronics
| Autor: | Markku Leskelae, Mikko Ritala, Kaupo Kukli |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Lanthanide
Materials science Silicon Rare earth Inorganic chemistry Oxide chemistry.chemical_element Nanotechnology Dielectric 02 engineering and technology Chemical vapor deposition 01 natural sciences Pulsed laser deposition Atomic layer deposition chemistry.chemical_compound 0103 physical sciences Materials Chemistry Microelectronics Thin film 010302 applied physics business.industry Mechanical Engineering Metals and Alloys General Medicine 021001 nanoscience & nanotechnology chemistry Mechanics of Materials Physical vapor deposition 0210 nano-technology business |
| Zdroj: | Journal of Alloys and Compounds. 418:27-34 |
| ISSN: | 0925-8388 |
| DOI: | 10.1016/j.jallcom.2005.10.061 |
| Popis: | Rare-earth oxides as dielectric materials may find their most important use in microelectronics as gate oxides in transistors. This paper reviews the literature on rare-earth oxide thin films and their use as dielectrics. Besides binary oxides and their combinations, ternary oxides with aluminum and silicon are also highlighted. Thin films have most often been fabricated by physical vapor deposition (PVD) methods but recently the chemical methods have gained considerable attention. Especially, atomic layer deposition (ALD) of rare-earth containing oxides has recently been studied by several groups. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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