Mid-infrared InAs/InAsSb superlattice nBn photodetector monolithically integrated onto silicon
| Autor: | Richard Beanland, Adam P. Craig, Peter J. Carrington, Qi Lu, Anthony Krier, Jonathan P. Hayton, E. Repiso, Andrew R. J. Marshall, Veronica Letka, P. D. Hodgson, Evangelia Delli |
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| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Silicon photonics
Materials science Silicon business.industry chemistry.chemical_element Photodetector 02 engineering and technology Specific detectivity 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials 010309 optics Responsivity chemistry 0103 physical sciences Optoelectronics Electrical and Electronic Engineering Photonics 0210 nano-technology business QC Biotechnology Dark current |
| ISSN: | 2330-4022 |
| Popis: | Mid-infrared (MIR) silicon photonics holds the potential for realizing next generation ultracompact spectroscopic systems for applications in gas sensing, defense, and medical diagnostics. The direct epitaxial growth of antimonide-based compound semiconductors on silicon provides a promising approach for extending the wavelength of silicon photonics to the longer infrared range. This paper reports on the fabrication of a high performance MIR photodetector directly grown onto silicon by molecular beam epitaxy. The device exhibited an extended cutoff wavelength at ∼5.5 μm and a dark current density of 1.4 × 10–2 A/cm2 under 100 mV reverse bias at 200 K. A responsivity of 0.88 A/W and a specific detectivity in the order of 1.5 × 1010 Jones was measured at 200 K under 100 mV reverse bias operation. These results were achieved through the development of an innovative structure which incorporates a type-II InAs/InAsSb superlattice-based barrier nBn photodetector grown on a GaSb-on-silicon buffer layer. The difficulties in growing GaSb directly on silicon were overcome using a novel growth procedure consisting of an efficient AlSb interfacial misfit array, a two-step growth temperature procedure and dislocation filters resulting in a low defect density, antiphase domain free GaSb epitaxial layer on silicon. This work demonstrates that complex superlattice-based MIR photodetectors can be directly integrated onto a Si platform, which provides a pathway toward the realization of new, high performance, large area focal plane arrays and mid-infrared integrated photonic circuits. |
| Databáze: | OpenAIRE |
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