Optimization of parameters for generating nitrogen plasma in plasma-assisted MOCVD growth of InGaN thin films
Autor: | Agus Subagio, Muhammad A. Mustajab, Sugianto Sugianto, Pepen Arifin, Heri Sutanto |
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Jazyk: | angličtina |
Rok vydání: | 2019 |
Předmět: |
010302 applied physics
Materials science Analytical chemistry General Physics and Astronomy chemistry.chemical_element 02 engineering and technology Chemical vapor deposition Plasma 021001 nanoscience & nanotechnology 01 natural sciences lcsh:QC1-999 Volumetric flow rate chemistry 0103 physical sciences Deposition (phase transition) Growth rate Metalorganic vapour phase epitaxy Thin film 0210 nano-technology Indium lcsh:Physics |
Zdroj: | AIP Advances, Vol 9, Iss 11, Pp 115304-115304-5 (2019) |
ISSN: | 2158-3226 |
Popis: | The deposition of InGaN thin films by plasma-assisted metalorganic chemical vapor deposition is achieved using nitrogen plasma as a nitrogen source. The generation of nitrogen plasma is optimized using optical emission spectroscopy, and the plasma is dominated by excited molecular nitrogen, which emits in the range 300–420 nm. The emission intensity of the plasma significantly depends on the flow rate of nitrogen gas and heater temperature and are optimally 70 SCCM and 650 °C, respectively. A further increase in these parameters results in a decrease in the intensity of the nitrogen plasma emission. An optimal flow rate and heater temperature are used to grow InGaN thin films on c-sapphire substrates. InGaN thin films grown with a TMIn vapor concentration (xv) of 0%, 50%, and 100% at a growth temperature of 650 °C are highly oriented to the (0002) plane in a hexagonal structure. The film grown with a vapor concentration of 50% has an indium concentration of 55% and no indication of phase separation. Increasing the growth temperature above 650 °C results in a decrease in the growth rate. |
Databáze: | OpenAIRE |
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