Stable Al 2 O 3 Encapsulation of MoS 2 ‐FETs Enabled by CVD Grown h‐BN

Autor:	Agata Piacentini, Damiano Marian, Daniel S. Schneider, Enrique González Marín, Zhenyu Wang, Martin Otto, Bárbara Canto, Aleksandra Radenovic, Andras Kis, Gianluca Fiori, Max C. Lemme, Daniel Neumaier
Jazyk:	angličtina
Předmět:	ddc:621.3 621.3 Electronic Optical and Magnetic Materials
Zdroj:	Advanced electronic materials 8(9), 2200123 (2022). doi:10.1002/aelm.202200123 Advanced Electronic Materials
ISSN:	2199-160X
DOI:	10.1002/aelm.202200123
Popis:	Advanced electronic materials 2200123 (2022). doi:10.1002/aelm.202200123 Published by Wiley-VCH Verlag GmbH & Co. KG, Weinheim
Databáze:	OpenAIRE
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