Surface passivation of (100) GaSb using self-assembled monolayers of long-chain octadecanethiol
| Autor: | A. E. Walkiewicz, K. Czuba, Agata Jasik, E. Papis-Polakowska, J. Kaniewski, Jaroslaw Jurenczyk, Jacek Szade |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Passivation X ray photoelectron spectroscopy Analytical chemistry General Physics and Astronomy 02 engineering and technology 010402 general chemistry 01 natural sciences Atomic force microscopy Surface conductivity X-ray photoelectron spectroscopy Monolayer Microscopy Electrical measurements Monolayers Kelvin probe force microscope Photons business.industry Organic polymers Photodetectors Self-assembled monolayer Gallium alloys Self assembly 021001 nanoscience & nanotechnology lcsh:QC1-999 0104 chemical sciences Optoelectronics 0210 nano-technology business lcsh:Physics |
| Zdroj: | AIP Advances, Vol 6, Iss 5, Pp 055206-055206-7 (2016) |
| ISSN: | 2158-3226 |
| DOI: | 10.1063/1.4949754 |
| Popis: | The passivation of (100) GaSb surface was investigated by means of the long-chain octadecanethiol (ODT) self-assembled monolayer (SAM). The properties of ODT SAM on (100) GaSb were characterized by the atomic force microscopy using Kelvin probe force microscopy mode and X-ray photoelectron spectroscopy. The chemical treatment of 10mM ODT-C2H5OH has been applied to the passivation of a type-II superlattice InAs/GaSb photodetector. The electrical measurements indicate that the current density was reduced by one order of magnitude as compared to an unpassivated photodetector. |
| Databáze: | OpenAIRE |
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