Impact of the Low Temperature Ohmic Contact Process on DC and Forward Gate Bias Stress Operation of GaN HEMT Devices

Autor:	Oguz Odabasi, Amir Ghobadi, Turkan Gamze Ulusoy Ghobadi, Yakup Unal, Gurur Salkim, Gunes Basar, Bayram Butun, Ekmel Ozbay
Přispěvatelé:	Odabaşı, Oğuz, Ghobadi, Amir, Ghobadi, Türkan Gamze Ulusoy, Ünal, Yakup, Salkım, Gurur, Başar, Güneş, Bütün, Bayram, Özbay, Ekmel
Rok vydání:	2022
Předmět:	Surface roughness Stabil15 ity AlGaN/GaN HEMTs Recessed 16 ohmic contacts Electrical and Electronic Engineering Ohmic contact Annealing temperatures Electronic Optical and Magnetic Materials
Zdroj:	IEEE Electron Device Letters
ISSN:	1558-0563 0741-3106
DOI:	10.1109/led.2022.3199569
Popis:	In AlGaN/GaN high electron mobility transistors (HEMTs), high temperature processes (such as ohmic annealing with >800°C value) could deform the crystal structure and induce trap states within the bulk and surface. Expanded defect densities cause crucial problems, such as threshold voltage ( Vth ) instability, current collapse, and high leakages. In this work, a low temperature ohmic contact process (630°C, 10 minutes) is adopted with recess etch, and contact resistances
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::01abf7e6547abebe19af82a6d3b43273 https://doi.org/10.1109/led.2022.3199569 Zobrazit plný text záznamu