Fabrication and characterization of organic light-emitting diodes using zinc complexes as hole-blocking layer
| Autor: | Won Sam Kim, Jung Min You, Burm-Jong Lee, Yoon-Ki Jang, Dong-Eun Kim, Young-Soo Kwon |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Materials science
Light Nitrogen Photochemistry Ultraviolet Rays Biomedical Engineering chemistry.chemical_element Bioengineering Nanotechnology Carbon nanotube Ligands law.invention law Spectroscopy Fourier Transform Infrared Electrochemistry Molecule General Materials Science Fiber chemistry.chemical_classification Benzoxazoles Nanocomposite Biomolecule Temperature General Chemistry Condensed Matter Physics Thermogravimetry Zinc chemistry Models Chemical Spectrophotometry Zinc Compounds Hybrid material Carbon Aluminum |
| Zdroj: | Journal of nanoscience and nanotechnology. 6(11) |
| ISSN: | 1533-4880 |
| Popis: | 2-(2-Hydroxyphenyl)benzoxazole (HPB) was employed as organic ligand and the corresponding zinc complexes (Zn(HPB)2 and Zn(HPB)q) were synthesized. And their EL properties were characterized. The structures of zinc complexes were determined with FT-NMR, FT-IR, UV-Vis, and XPS. The thermal stability showed up to about 300 °C under nitrogen flow, which was measured by TGA. The photoluminescence (PL) of zinc complexes were measured from the DMF solution. The PL emitted in blue and yellow region, respectively. The EL devices were fabricated by the vacuum deposition. Two kinds of OLEDs devices were fabricated; ITO/NPB (40 nm)/Zn complexes (60 nm)/LiF/Al and ITO/NPB (40 nm)/Alq3 (60 nm)/Zn complexes (5 nm)/LiF/Al. Both of the EL properties as the emitting and the hole-blocking layer were investigated. The EL emission of Zn(HPB)q exhibited green light centered at 532 nm. The device showed a turn-on voltage at 5 V and a luminance of 6073 cd/m2 at 10 V. Meanwhile, the maximum EL the emission of the Zn(HPB)2 device was found to be at 447 nm. And the device showed a luminance of 2813 cd/m2 at 10 V. The ITO/NPB (40 nm)/Alq3 (60 nm)/Zn(HPB)2 (5 nm)/LiF/Al device showed increased luminance of L = 17000 cd/m2 compared to L = 12000 cd/m2 for similar device fabricated without the hole-blocking layer. And the turn-on voltage was significantly affected by the existence of the hole-blocking layer. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|