High PAE high reliability AlN/GaN double heterostructure
| Autor: | Malek Zegaoui, Farid Medjdoub, Astrid Linge, Riccardo Silvestri, Gaudenzio Meneghesso, B. Grimbert, Enrico Zanoni, Matteo Meneghini |
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| Přispěvatelé: | Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Università degli Studi di Padova = University of Padua (Unipd) |
| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: |
Materials science
Gate length 02 engineering and technology Double heterostructure 01 natural sciences 7. Clean energy [SPI]Engineering Sciences [physics] Reliability (semiconductor) Sic substrate 0103 physical sciences Materials Chemistry Electrical and Electronic Engineering AlN/GaN DHFET RF power ComputingMilieux_MISCELLANEOUS 010302 applied physics business.industry Load pull RF power amplifier Heterojunction 021001 nanoscience & nanotechnology Condensed Matter Physics Reliability Power-added-efficiency (PAE) Electronic Optical and Magnetic Materials Load-pull Optoelectronics 0210 nano-technology business |
| Zdroj: | Solid-State Electronics Solid-State Electronics, 2015, 113, pp.49-53. ⟨10.1016/j.sse.2015.05.009⟩ Solid-State Electronics, Elsevier, 2015, 113, pp.49-53. ⟨10.1016/j.sse.2015.05.009⟩ |
| ISSN: | 0038-1101 |
| Popis: | International audience; We report on AlN/GaN double heterostructures for high frequency applications. 600 h preliminary reliability assessment has been performed on these emerging RF devices, showing promising millimeter-wave 100 nm gate length GaN-on-Si device stability for the first time. A 150 nm AlN/GaN double heterostructure has been developed and evaluated on SiC substrate. State-of-the-art CW power-added-efficiencies (PAE) up to 40 GHz have been achieved on ultrathin barrier (6 nm) GaN devices while operating at a drain bias exceeding 30 V. |
| Databáze: | OpenAIRE |
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