Accurate mask model implementation in optical proximity correction model for 14-nm nodes and beyond
| Autor: | Ana-Maria Armeanu, Isabelle Schanen, Frederic Huguennet, Michael Chomat, Ingo Bork, Peter Buck, Nacer Zine El Abidine, Frank Sundermann, Vincent Farys, Emek Yesilada |
|---|---|
| Přispěvatelé: | Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), STMicroelectronics [Crolles] (ST-CROLLES), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Garet, Frédéric |
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Computer science
[SPI] Engineering Sciences [physics] 02 engineering and technology 01 natural sciences Data modeling 010309 optics [SPI]Engineering Sciences [physics] Optics Optical proximity correction 0103 physical sciences Electrical and Electronic Engineering ComputingMilieux_MISCELLANEOUS business.industry Mechanical Engineering Rounding 021001 nanoscience & nanotechnology Condensed Matter Physics 3D modeling Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Resist Logic gate Photomask 0210 nano-technology business Focus (optics) |
| Zdroj: | Journal of Micro/Nanolithography, MEMS, and MOEMS Journal of Micro/Nanolithography, MEMS, and MOEMS, 2016, 15 (2), pp.021011 Journal of Micro/Nanolithography, MEMS, and MOEMS, Society of Photo-optical Instrumentation Engineers, 2016, 15 (2), pp.021011 |
| ISSN: | 1932-5150 |
| Popis: | In a previous work, we demonstrated that the current optical proximity correction model assuming the mask pattern to be analogous to the designed data is no longer valid. An extreme case of line-end shortening shows a gap up to 10 nm difference (at mask level). For that reason, an accurate mask model has been calibrated for a 14-nm logic gate level. A model with a total RMS of 1.38 nm at mask level was obtained. Two-dimensional structures, such as line-end shortening and corner rounding, were well predicted using scanning electron microscopy pictures overlaid with simulated contours. The first part of this paper is dedicated to the implementation of our improved model in current flow. The improved model consists of a mask model capturing mask process and writing effects, and a standard optical and resist model addressing the litho exposure and development effects at wafer level. The second part will focus on results from the comparison of the two models, the new and the regular. |
| Databáze: | OpenAIRE |
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