Effects of pulsed negative bias temperature stressing in p-channel power VDMOSFETs
| Autor: | Snežana Golubović, Zoran Prijić, Ivica Manic, Danijel Dankovic, S. Djoric-Veljkovic, Vojkan Davidovic, Aneta Prijić, Ninoslav Stojadinovic |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
pulsed bias stress NBTI 02 engineering and technology 01 natural sciences Stress (mechanics) P channel 0103 physical sciences 0202 electrical engineering electronic engineering information engineering threshold voltage General Environmental Science lifetime 010302 applied physics business.industry 020208 electrical & electronic engineering Stress induced Electrical engineering Negative bias Power (physics) Duty cycle VDMOSFET General Earth and Planetary Sciences Optoelectronics business Degradation (telecommunications) Voltage |
| Zdroj: | Facta universitatis-series: Electronics and Energetics (2016) 29(1):49-60 |
| ISSN: | 2217-5997 0353-3670 |
| DOI: | 10.2298/fuee1601049m |
| Popis: | Our recent research of the effects of pulsed bias NBT stressing in p-channel power VDMOSFETs is reviewed in this paper. The reduced degradation normally observed under the pulsed stress bias conditions is discussed in terms of the dynamic recovery effects, which are further assessed by varying the duty cycle ratio and frequency of the pulsed stress voltage. The results are analyzed in terms of the effects on device lifetime as well. A tendency of stress induced degradation to decrease with lowering the duty cycle and/or increasing the frequency of the pulsed stress voltage, which leads to the increase in device lifetime, is explained in terms of enhanced dynamic recovery effects. |
| Databáze: | OpenAIRE |
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