Nanowire systems: technology and design
Autor: | Michele De Marchi, Luca Amaru, Pierre-Emmanuel Gaillardon, Davide Sacchetto, Shashikanth Bobba, Giovanni De Micheli |
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Jazyk: | angličtina |
Rok vydání: | 2014 |
Předmět: |
Materials science
General Mathematics Nanowire General Physics and Astronomy Nanotechnology Hardware_PERFORMANCEANDRELIABILITY nanosystems law.invention nanoelectronics law Hardware_INTEGRATEDCIRCUITS controllable polarity nanowire transistors business.industry Transistor General Engineering Articles Logic synthesis CMOS Nanoelectronics Logic gate Optoelectronics regular arrays Field-effect transistor business logic synthesis AND gate Hardware_LOGICDESIGN Research Article |
Zdroj: | Philosophical transactions. Series A, Mathematical, physical, and engineering sciences |
ISSN: | 1471-2962 1364-503X |
Popis: | Nanosystems are large-scale integrated systems exploiting nanoelectronic devices. In this study, we consider double independent gate, vertically stacked nanowire field effect transistors (FETs) with gate-all-around structures and typical diameter of 20 nm. These devices, which we have successfully fabricated and evaluated, control the ambipolar behaviour of the nanostructure by selectively enabling one type of carriers. These transistors work as switches with electrically programmable polarity and thus realize an exclusive or operation. The intrinsic higher expressive power of these FETs, when compared with standard complementary metal oxide semiconductor technology, enables us to realize more efficient logic gates, which we organize as tiles to realize nanowire systems by regular arrays. This article surveys both the technology for double independent gate FETs as well as physical and logic design tools to realize digital systems with this fabrication technology. |
Databáze: | OpenAIRE |
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