Structural and electronic properties of the pure and stable elemental 3D topological Dirac semimetal $\alpha$-Sn
| Autor: | Pin-Cheng Lin, Harsh Bana, Umamahesh Thupakula, Sara Gonzalez, Chris Van Haesendonck, Luca Petaccia, L. M. C. Pereira, Maya N. Nair, Margriet J. Van Bael, Ivan Madarevic, Niels Claessens, Gertjan Lippertz, Giovanni Di Santo |
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| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Technology
INSB(100) Materials science Photoemission spectroscopy lcsh:Biotechnology Scanning tunneling spectroscopy Materials Science BETA Materials Science Multidisciplinary 02 engineering and technology Electronic structure Topology 01 natural sciences law.invention Physics Applied symbols.namesake Condensed Matter::Materials Science law lcsh:TP248.13-248.65 0103 physical sciences General Materials Science Nanoscience & Nanotechnology GROWTH-MORPHOLOGY 010302 applied physics Condensed Matter - Materials Science Science & Technology Dopant STABILITY Physics Fermi level General Engineering 021001 nanoscience & nanotechnology Semimetal lcsh:QC1-999 3. Good health SURFACE OXIDATION Physical Sciences MOSSBAUER symbols Science & Technology - Other Topics Scanning tunneling microscope 0210 nano-technology TRANSITION lcsh:Physics Molecular beam epitaxy |
| Zdroj: | APL Materials, Vol 8, Iss 3, Pp 031114-031114-7 (2020) |
| Popis: | In-plane compressively strained $\alpha$-Sn films have been theoretically predicted and experimentally proven to possess non-trivial electronic states of a 3D topological Dirac semimetal. The robustness of these states typically strongly depends on purity, homogeneity and stability of the grown material itself. By developing a reliable fabrication process, we were able to grow pure strained $\alpha$-Sn films on InSb(100), without heating of the substrate during growth, nor using any dopants. The $\alpha$-Sn films were grown by molecular beam epitaxy, followed by experimental verification of the achieved chemical purity and structural properties of the film's surface. Local insight into the surface morphology was provided by scanning tunneling microscopy. We detected the existence of compressive strain using M\"ossbauer spectroscopy and we observed a remarkable robustness of the grown samples against ambient conditions. The topological character of the samples was confirmed by angle-resolved photoemission spectroscopy, revealing the Dirac cone of the topological surface state. Scanning tunneling spectroscopy, moreover, allowed obtaining an improved insight into the electronic structure of the 3D topological Dirac semimetal $\alpha$-Sn above the Fermi level. Comment: APM19-AR-01221R |
| Databáze: | OpenAIRE |
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