True random number generation exploiting SET voltage variability in resistive RAM memory arrays
| Autor: | Mathieu Moreau, Hussein Bazzi, P. Canet, Hassen Aziza, Jérémy Postel-Pellerin, Vincenzo Della Marca, Adnan Harb |
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| Přispěvatelé: | Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Aix Marseille Université (AMU), Lebanese International University (LIU), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2019 |
| Předmět: |
Random number generation
Computer science stochastic switching 02 engineering and technology Memristor 01 natural sciences law.invention Set (abstract data type) OxRAM True Random Number Generator law 0103 physical sciences [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Bitstream memristor 010302 applied physics Resistive touchscreen business.industry Electrical engineering 021001 nanoscience & nanotechnology Resistive random-access memory RRAM I NIST TRNG State (computer science) 0210 nano-technology business |
| Zdroj: | NVMTS 2019 19th Non-Volatile Memory Technology Symposium (NVMTS) 2019 19th Non-Volatile Memory Technology Symposium (NVMTS), Oct 2019, Durham, France. pp.1-5, ⟨10.1109/NVMTS47818.2019.9043369⟩ |
| Popis: | International audience; A novel True Random Number Generator circuit fabricated in a 130nm HfO2-based resistive RAM process is presented. The generation of the random bit stream is based on a specific programming sequence applied to a dedicated memory array. In the proposed programming scheme, the voltage applied to the cells of the memory array is fixed at the median SET voltage of the distribution, to program only a subset of the memory array, resulting in a stochastic distribution of cell resistance values. Some cells are switched in a low resistive state, while the remaining cells maintain their initial high resistance state. Resistance values are next converted into a bit stream and confronted to National Institute of Standards and Technology (NIST) test benchmarks. The generated random bit stream has successfully passed eleven NIST tests out of fifteen without any post-processing. |
| Databáze: | OpenAIRE |
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