Modeling of the impact of Se-vacancies on the electrical properties of Cu(In,Ga)Se2 films and junctions
| Autor: | P. Zabierowski, Marek Maciaszek, Koen Decock |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: |
010302 applied physics
Imagination Materials science Chemical substance media_common.quotation_subject Metals and Alloys 02 engineering and technology Surfaces and Interfaces 021001 nanoscience & nanotechnology 7. Clean energy 01 natural sciences Molecular physics Copper indium gallium selenide solar cells Acceptor Space charge Surfaces Coatings and Films Electronic Optical and Magnetic Materials Metastability 0103 physical sciences Capacitance–voltage profiling Materials Chemistry 0210 nano-technology Science technology and society media_common |
| Zdroj: | Thin Solid Films |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2013.01.035 |
| Popis: | In this contribution we aim at a better understanding the influence of metastable VSe defects on electrical characteristics of Cu(In,Ga)Se2-based solar cells. In order to achieve this goal we calculate the distribution of VSe charge states by solving numerically the equations involving transition rates between the metastable donor and acceptor configuration. By varying systematically the set of three parameters in a broad range (net shallow acceptor doping level, VSe defect density and temperature) we analyze quantitatively in which conditions and how the metastable defects influence/control the Fermi level position and hence the free carrier concentration. Using these results, we calculate time constants for conversion processes between donor and acceptor configurations. In the second part of the paper we model the influence of VSe-related defects on capacitance–voltage (CV) space charge profiles in different metastable states (reverse bias and light soaking). We propose a method allowing the evaluation of the lower bound for the metastable VSe defect concentration from CV profiles. |
| Databáze: | OpenAIRE |
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