The effect of strain on tunnel barrier height in silicon quantum devices
Autor: | Michael Stewart, Ryan M. Stein |
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Rok vydání: | 2021 |
Předmět: |
010302 applied physics
Materials science Fabrication Silicon Strain (chemistry) business.industry Measure (physics) General Physics and Astronomy chemistry.chemical_element 02 engineering and technology Edge (geometry) 021001 nanoscience & nanotechnology 01 natural sciences Thermal expansion Article chemistry Modulation 0103 physical sciences Optoelectronics 0210 nano-technology Electronic band structure business |
Zdroj: | J Appl Phys |
ISSN: | 0021-8979 |
Popis: | Semiconductor quantum dot (QD) devices experience a modulation of the band structure at the edge of lithographically defined gates due to mechanical strain. This modulation can play a prominent role in the device behavior at low temperatures, where QD devices operate. Here, we develop an electrical measurement of strain based on the I(V) characteristics of tunnel junctions defined by aluminum and titanium gates. We measure relative differences in the tunnel barrier height due to strain consistent with experimentally measured coefficients of thermal expansion (α) that differ from the bulk values. Our results show that the bulk parameters commonly used for simulating strain in QD devices incorrectly capture the impact of strain. The method presented here provides a path forward towards exploring different gate materials and fabrication processes in silicon QDs in order to optimize strain. |
Databáze: | OpenAIRE |
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