Characterization and electrical transport properties of the misfit layer compounds (BiSe)1.10NbSe2 and (BiSe)1.09TaSe2
| Autor: | G.A. Wiegers, J. L. de Boer, W.Y. Zhou, Auke Meetsma |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 1992 |
| Předmět: |
M = SN
(SNS)1.17NBS2 TERNARY SELENIDES Niobium chemistry.chemical_element Mineralogy Crystal structure X-RAY-DIFFRACTION Electrical resistivity and conductivity Hall effect Thermoelectric effect General Materials Science Lamellar structure Inorganic compound TANTALUM chemistry.chemical_classification Mechanical Engineering NIOBIUM BISMUTH Condensed Matter Physics COMPOUNDS (MS)NTS2 Crystallography SNNBS3 chemistry TA Mechanics of Materials X-ray crystallography NB PB |
| Zdroj: | Materials Research Bulletin, 27(5), 563-572. PERGAMON-ELSEVIER SCIENCE LTD |
| ISSN: | 0025-5408 |
| Popis: | Compounds (BiSe) 1.10 NbSe 2 and (BiSe) 1.09 TaSe 2 were prepared by high-temperature reaction of the elements. Crystals were grown by vapor transport. The misfit layer compounds are built of alternate sandwiches NbSe 2 (TaSe 2 ) with Nb (Ta) in trigonal prisms of Se and interface modulated double layers of BiSe; 1 3 of the Bi atoms are at distances of 3.19 A across the interface. Electrical transport properties (resistivity, Hall effect and Seebeck effect) are in agreement with conduction by light holes and heavy electrons in the 4d z 2 band of NbSe 2 (5d z 2 band of TaSe 2 ). There is no significant electron donation from BiSe to NbSe 2 (TaSe 2 ); three 6 p electrons per Bi being used for Bi-Se and Bi-Bi bonds. |
| Databáze: | OpenAIRE |
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