Localized states and quantum effect of photo-generated carriers in photovoltaic system
| Autor: | Chao-Jian Qin, Shi-Rong Liu, Wei-Qi Huang, Zhong-Mei Huang, Xue-Ke Wu |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
Photon
Photoluminescence Materials science Silicon Science chemistry.chemical_element 02 engineering and technology Electron Quantum Hall effect 010402 general chemistry 01 natural sciences Molecular physics Article symbols.namesake Multidisciplinary Auger effect Doping Macroscopic quantum phenomena 021001 nanoscience & nanotechnology 0104 chemical sciences chemistry symbols Medicine 0210 nano-technology |
| Zdroj: | Scientific Reports, Vol 7, Iss 1, Pp 1-9 (2017) Scientific Reports |
| ISSN: | 2045-2322 |
| Popis: | We have fabricated the multiple nanolayers impuritied on silicon pillars for Si solar cells to pick up photons in ultraviolet and infrared region of solar spectra, in which the localized states originated from nanosilicon doped with oxygen are built to avoid Auger recombination, and some interesting quantum phenomena in the localized states have been observed. The quantum effect of photo-generated carriers has been observed in I-V curve measurement on the photovoltaic sample prepared in oxygen by using nanosecond pulsed laser. More interesting, the twin states of quantum vibration are measured in the localized states originated from the impuritied nanosilicon, which provides a stable reservoir for electrons in the photovaltaic system. It should be noted that the amplitude change of the quantum vibration occurs under magnetic field with 0.33T on the sample prepared in oxygen, owing to the electron spin in the localized states. The photoluminescence (PL) spectra measured from 300 nm to 1700 nm exhibit the localized states in various regions in the photovoltaic system, in which the electrons can stand in the localized states with longer lifetime to be uneasy into Auger recombination. |
| Databáze: | OpenAIRE |
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