Microstructure of the nitrogen pair in crystalline silicon studied by ion channeling
| Autor: | F. Berg Rasmussen, B. Bech Nielsen |
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| Rok vydání: | 1994 |
| Předmět: | |
| Zdroj: | Physical Review B. 49:16353-16360 |
| ISSN: | 1095-3795 0163-1829 |
| Popis: | The structure of the nitrogen pair in crystalline silicon has been studied by the channeling technique and by infrared absorption spectroscopy. Silicon crystals have been implanted with $^{15}\mathrm{N}$ at room temperature and have subsequently been annealed at 725 \ifmmode^\circ\else\textdegree\fi{}C to form pairs. The channeling measurements have been carried out at 136 K using the nuclear reaction $^{15}\mathrm{N}$(p,\ensuremath{\alpha}${)}^{12}$C to probe the $^{15}\mathrm{N}$ atoms, and the angular distribution of the \ensuremath{\alpha} particle yield has been measured around all major crystal axes and planes. The major part of the implanted nitrogen atoms (70%) is found to occupy a unique type of site which is displaced by 1.1 \AA{} from a perfect lattice site along a 〈100〉 direction. The population of this type of site has the same annealing properties as the local vibrational modes associated with the nitrogen pair in silicon. The experimental findings are consistent with a recently suggested model of the nitrogen pair. |
| Databáze: | OpenAIRE |
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