Effect of halide ions on the formation and dissolution behaviour of zirconium oxide
| Autor: | H.A El-Dahan, G.A. El-Mahdy, S.S Mahmoud |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Zirconium
Materials science education Inorganic chemistry Metals and Alloys Oxide chemistry.chemical_element Halide Surfaces and Interfaces Capacitance Surfaces Coatings and Films Electronic Optical and Magnetic Materials Ion chemistry.chemical_compound chemistry Materials Chemistry Zirconium oxide Dissolution |
| Zdroj: | Scopus-Elsevier |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/s0040-6090(95)08503-3 |
| Popis: | The effect of halide ions on the formation and dissolution behaviour of zirconium oxide was studied using galvanostatic and capacitance techniques. Increase of F− ion concentration and temperature restrict the oxide film growth and increase the average rate of dissolution of zirconium oxide. The Cl− ion causes a localized attack on zirconium during oxide formation and dissolves the oxide to some extent. The Br− ion has an appreciable attack on the oxide film formation and dissolution, while I− ion has a very low effect on both the formation and dissolution process of zirconium oxide. Oxide film formed at a high formation voltage was found to be more defective than that formed at a lower one. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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