| Autor: |
Sajedin, Maryam, Elfergani, Issa, Rodriguez, Jonathan, Abd-Alhameed, Raed, Fernández Barciela, Mónica |
| Přispěvatelé: |
IEEE |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
2021 IEEE 26th International Workshop on Computer Aided Modeling and Design of Communication Links and Networks (CAMAD). |
| ISSN: |
2017-8824 |
| DOI: |
10.1109/camad52502.2021.9617791 |
| Popis: |
This work presents a complete design process of a high-gain MMIC Class-J power amplifier (PA) based on the 0.25−μm A1GaAs-InGaAs pHEMT technology at X-Band frequencies. The proposed technique can reduce the chip area and improve the energy efficiency. The simulation results indicate that the designed Class-J PA at 6V operation voltage achieves 18dB power gain, 56% PAE and output power of 27.6dBm at 1dB compression. The area size of two-stages PA is 0.9mm2 . Fundação para a Ciência e a Tecnologia | Ref. UIDB/50008/2020 Fundação para a Ciência e a Tecnologia | Ref. UIDP/50008/2020 Fundação para a Ciência e a Tecnologia | Ref. POCI-01-0145-FEDER-030500 Fundação para a Ciência e a Tecnologia | Ref. ECSEL/0006/2019 Agencia Estatal de Investigación | Ref. TEC2017-88242-C3-2-R |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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