| Autor: |
M. Boota, E. P. Houwman, G. Lanzara, G. Rijnders |
| Přispěvatelé: |
Inorganic Materials Science, MESA+ Institute |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics, 133(14). American Institute of Physics |
| ISSN: |
0021-8979 |
| DOI: |
10.1063/5.0139426 |
| Popis: |
We are reporting on high quality epitaxial thin films of [Pb(Mg1/3Nb2/3)O3]0.67-(PbTiO3)0.33 [PMN-PT (67/33)]. These films were deposited on (001) oriented, vicinal SrTiO3 single crystal substrates, using 1 mol. % niobium-doped Pb(Zr0.52,Ti0.48)O3 (Nb-PZT) as an interfacial layer. The functional properties of the epitaxial PMN-PT (67/33) thin films were investigated as a function of the layer thickness of the Nb-PZT layer. The deposited hetero-structures are perovskite phase pure and fully (001)-oriented. The variation in Nb-PZT interfacial layer thickness results in an increasing trend change of the in-plane lattice parameter of that layer, which in turn causes a decrease in the c/a ratio of the PMN-PT film on top. The most noticeable effect related to this is a decrease in built-in-bias (imprint) voltage. Thus, the built-in bias can be tuned by changing the interfacial layer thickness. The ferroelectric capacitor properties are found to be most stable for the thinnest interfacial layers under a high number (108) of switching cycles. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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