Parameters influencing the maximum controllable current in gate commutated thyristors

Autor:	Neophytos Lophitis, Florin Udrea, Martin Arnold, Iulian Nistor, Marina Antoniou, Tobias Wikstrom, Jan Vobecky
Rok vydání:	2014
Předmět:	Engineering Control and Systems Engineering business.industry Voltage control Electrical engineering Thyristor ComputerApplications_COMPUTERSINOTHERSYSTEMS Wafer Electrical and Electronic Engineering Current (fluid) business Buffer (optical fiber) Peak concentration
Zdroj:	IET Circuits, Devices & Systems. 8:221-226
ISSN:	1751-8598 1751-858X
Popis:	The model of interconnected numerical device segments can give a prediction on the dynamic performance of large area full wafer devices such as the Gate Commutated Thyristors (GCTs) and can be used as an optimisation tool for designing GCTs. In this study the authors evaluate the relative importance of the shallow p-base thickness, its peak concentration, the depth of the p-base and the buffer peak concentration.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fff1c2d9d08690bb457a0527866103b9 https://doi.org/10.1049/iet-cds.2013.0217 Zobrazit plný text záznamu Plný text