Electronegativity and point defect formation in the ion implanted SiO2 layers

Autor:	H. Reuther, Slawomir Prucnal, Wolfgang Skorupa, Jiaming Sun, Ch. Buchal, Jerzy Żuk
Rok vydání:	2007
Předmět:	Materials science Silicon Annealing (metallurgy) Analytical chemistry Oxide chemistry.chemical_element Electroluminescence Condensed Matter Physics Surfaces Coatings and Films Ion Electronegativity chemistry.chemical_compound Ion implantation chemistry Molecule Instrumentation
Zdroj:	Vacuum. 81:1296-1300
ISSN:	0042-207X
DOI:	10.1016/j.vacuum.2007.01.032
Popis:	The metal–oxide–silicon (MOS) diode structure containing ion implanted electropositive (M + ) and electronegative (M − ) ions is one of the most promising candidates for a new type of high-efficiency electroluminescence (EL) devices which can be integrated with standard silicon CMOS technology. The implantation process creates defects in the SiO 2 layer. After implantation, an annealing process leads to the diffusion of implanted elements and broadening of the SiO 2 /Si interface. The influence of different implanted ions (Gd, F, K) was investigated by EL measurements and correlated to different defects in the oxide layer. Implanted electronegative ions (such as F) lead to defects comprising O 2 molecules and peroxy radicals (POR). On the other hand, electropositive ions (Gd and K) increase the number of oxygen vacancy defects.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ffee5d4fe81a4398f63d990d28613db8 https://doi.org/10.1016/j.vacuum.2007.01.032 Zobrazit plný text záznamu Full Text from ScienceDirect