| Autor: |
Mark L. Raphaelian, J. David Casey, John C. Morgan, David C. Ferranti, Andrew F. Doyle |
| Rok vydání: |
1998 |
| Předmět: |
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| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| DOI: |
10.1117/12.328841 |
| Popis: |
Over the past several years, advanced photolithography has moved from 0.35 micrometers technology to 0.25 micrometers as the standard. Soon the technology will move into the 0.18 micrometers generation. Due to the ever-shrinking feature sizes on advanced photolithographic masks, phase shifting technology has been incorporated to improve resolution on the exposed wafer. On such masks the minimum phase error and the maximum percent transmission must be dealt with. These requirements have challenged the ability to repair masks with opaque and clear defects. The Micrion focused ion beam system currently repairs opaque defects found on advanced phase shifting chrome and molybdenum silicide masks. In this paper, Micrion discusses advanced repair techniques and strategies used to address the stringent requirements of matching phase and percent transmission at the repaired defect sites. Difficulties in opaque defect and clear defect repair strategies will be discussed. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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