Light-controllable room temperature negative differential resistance in deep-trench type nitride–oxide tunneling device and its applications
| Autor: | Kai D Feng, Baozhen Li, Fen Chen |
|---|---|
| Rok vydání: | 2002 |
| Předmět: | |
| Zdroj: | Applied Physics Letters. 80:3271-3273 |
| ISSN: | 1077-3118 0003-6951 |
| Popis: | This study presents the room-temperature operation of deep-trench type nitride–oxide metal–insulator–semiconductor three-terminal tunneling devices which were fabricated by a standard metal–oxide–semiconductor process. It is instructive to observe a photoinduced N-type negative differential resistance (NDR) with a high peak-to-valley current ratio for device operated under negative polysilicon node bias under tungsten lamp illumination. An explanation was provided for the NDR phenomenon with proper three-terminal biasing. The sudden current drop under light illumination was caused by the sudden reduction of the two-carrier conduction due to Esaki band-to-band tunneling. The NDR amplitude could be modulated by light intensity. The position of the NDR current peak was tunable at different voltages with different p-well biases. The optoelectronic response of nitride–oxide devices we investigate here may open an application window for the nitride–oxide system in silicon-based optoelectronic integrated circuit... |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|