Comparison of InGaAs/InAlAs electroabsorption modulator structures on (100) and (111) InP substrates
| Autor: | Francesca Peiró, A. Cornet, K Harteros, George Deligeorgis, G. Halkias, Alexandros Georgakilas, M. Androulidaki, C Michelakis, M. Calamiotou, N Bécourt |
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| Rok vydání: | 1999 |
| Předmět: |
Materials science
business.industry Mechanical Engineering Photoconductivity PIN diode Physics::Optics Heterojunction Substrate (electronics) Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics law.invention Crystal Condensed Matter::Materials Science Absorption edge Mechanics of Materials law Optoelectronics General Materials Science business Vicinal Quantum well |
| Zdroj: | Materials Science and Engineering: B. 66:181-184 |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/s0921-5107(99)00104-x |
| Popis: | The MBE growth and properties of InGaAs/InAlAs heterostructures on vicinal (111)B InP substrates have been investigated. Electroabsorption modulator pin MQW heterostructures were grown on both (100) and vicinal (111)B InP substrates, pin diodes were processed and their photocurrent spectra at 300 K were compared. The spectra of (100) structures exhibited many intense excitonic transitions and applied reverse bias resulted to strong red shift of the absorption edge. The photocurrent spectra of similar (111) structures, however, appeared rather featureless with less abrupt absorption edge. These results on (111) are related to crystal disorder and quantum well variations resulting from InAlAs surface step-bunching and InGaAs, InAlAs compositional modulations. |
| Databáze: | OpenAIRE |
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