Effect of reactor pressure on the electrical and structural properties of InN epilayers grown by high-pressure chemical vapor deposition
| Autor: | M. K. Indika Senevirathna, Ian T. Ferguson, Andrew Melton, Nikolaus Dietz, A. G. Unil Perera, Max Buegler, Sampath Gamage, Ananta R. Acharya, Ramazan Atalay, Liqin Su, Axel Hoffmann |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Analytical chemistry Wide-bandgap semiconductor Surfaces and Interfaces Chemical vapor deposition Chemical reactor Condensed Matter Physics Surfaces Coatings and Films Full width at half maximum symbols.namesake X-ray crystallography Sapphire symbols Raman spectroscopy Layer (electronics) |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 30:031511 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.4705727 |
| Popis: | The influence of super-atmospheric reactor pressures (2.5‐18.5bar) on the electrical and structural properties of InN epilayers deposited on GaN/sapphire (0001) templates by high-pressure chemical vapor deposition has been studied. The epilayers were analyzed by Raman, x-ray diffraction (XRD), and Fourier transform infrared reflectance spectrometry to determine the structural properties as well as the phonon frequencies, dielectric function, plasma frequency, layer thickness and damping parameters of the epilayers. For the studied process parameter space, best material properties were achieved at a reactor pressure of 12.5bar and a group-V/III ratio of 2500 with a free carrier concentration of 1.5 � 10 18 cm � 3 , a mobility of the bulk InN layer of 270 cm 2 V � 1 s � 1 , and a Raman (E2 high) FWHM value of 10.3cm � 1 . This study shows that the crystalline layer properties—probed by XRD 2h‐x scans—improve with increasing reactor pressure. V C 2012 |
| Databáze: | OpenAIRE |
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