Polycarbonate electron beam resist using solvent developer
| Autor: | Mustafa Yavuz, Bo Cui, Arwa Saud Abbas |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Materials science
Ion beam business.industry Ion track Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Methyl isobutyl ketone chemistry.chemical_compound Resist chemistry Etching (microfabrication) visual_art Polymer chemistry visual_art.visual_art_medium Optoelectronics Dry etching Electrical and Electronic Engineering Polycarbonate business Electron-beam lithography |
| Zdroj: | Microelectronic Engineering. 113:140-142 |
| ISSN: | 0167-9317 |
| Popis: | Polycarbonate is a popular membrane material fabricated by ion track etching method and used for filtration, thus it is a sort of ion beam resist. Here we show that it can also be used as a positive electron beam resist using solvent development. Compared to the popular resist PMMA, polycarbonate is more chemically and thermally stable, and is more resistant to plasma dry etching. Various solvents, including cyclopentanone, xylene, pentyl acetate and methyl isobutyl ketone, were found to be suitable developers for polycarbonate when diluted properly with 2-propanol. The resist showed a low contrast between 0.5 and 1.0 when using those solvent developers, and thus it is not a good resist for defining high resolution dense patterns, yet is ideal for grayscale lithography to generate quasi-three dimensional structures like Fresnel zone-plate lens. Nevertheless, we achieved sub-50nm resolution for sparse line array pattern. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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