Advances in wide bandgap SiC for optoelectronics

Autor:	Rickard Liljedahl, Mikael Syväjärvi, Saskia Schimmel, Yiyu Ou, Michl Kaiser, Haiyan Ou, Jianwu Sun, Margareta K. Linnarsson, Aikaterini Argyraki, Valdas Jokubavicius, Peter J. Wellmann
Rok vydání:	2014
Předmět:	Materials science business.industry Band gap Doping Nanotechnology Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound Nanolithography chemistry law Power electronics Silicon carbide Optoelectronics business Diode Light-emitting diode
Zdroj:	The European Physical Journal B. 87
ISSN:	1434-6036 1434-6028
DOI:	10.1140/epjb/e2014-41100-0
Popis:	Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication. This paper will review the advances in fluorescent SiC for white light-emitting diodes, covering the poly-crystalline doped SiC source material growth, single crystalline epitaxy growth of fluorescent SiC, and nanofabrication of SiC to enhance the extraction efficiency for fluorescent SiC based white LEDs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ffcf7562e1fcc916964660c0ffbc9921 https://doi.org/10.1140/epjb/e2014-41100-0 Zobrazit plný text záznamu Full text from SpringerLink