Recombination of O and H Atoms on the Surface of Nanoporous Dielectrics

Autor:	A. T. Rakhimov, S M Zyryanov, Yu. A. Mankelevich, O.V. Braginsky, A.S. Kovalev, Mikhail R. Baklanov, Tatyana Rakhimova, E. M. Malykhin, Dmitry Lopaev, Anna Vasilieva
Rok vydání:	2009
Předmět:	Nuclear and High Energy Physics Materials science Hydrogen Nanoporous Infrared spectroscopy chemistry.chemical_element Plasma afterglow Condensed Matter Physics Molecular physics Ion chemistry Chemical bond Atomic physics Fourier transform infrared spectroscopy Recombination
Zdroj:	IEEE Transactions on Plasma Science. 37:1697-1704
ISSN:	1939-9375 0093-3813
DOI:	10.1109/tps.2009.2023991
Popis:	The interaction of O and H atoms with SiOCH nanoporous low-dielectric-constant (low-k) films is studied in the far plasma afterglow in the absence of ion and photon fluxes on the surface. The loss probabilities of O and H atoms are directly measured by plasma-induced actinometry. Modification of low-k films during the experimental scans was studied by the Fourier transform infrared spectroscopy technique. The model of O- and H-atom recombination in nanoporous materials was developed to analyze the experimental data. It is shown that the main mechanism of the O and H loss is their surface recombination. The consumption of these atoms in the reactions with the carbon-containing hydrophobic groups has a minimal contribution. Thus, the surface recombination defines a damage depth in low-k films. It was shown that the oxygen atoms lead to the noticeable removal of CH3 groups. On the contrary, hydrogen atoms do not break Si-CH3 bonds, allowing the avoidance of plasma damage in the case of the hydrogen-plasma-based resist strip in appropriate conditions.
Databáze:	OpenAIRE
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