In situ spectral ellipsometry for real-time diagnostics and control in microelectronics manufacturing
| Autor: | W.M. Duncan |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Materials science
business.industry Process (computing) ComputerApplications_COMPUTERSINOTHERSYSTEMS Hardware_PERFORMANCEANDRELIABILITY Wafer backgrinding Metrology Ellipsometry Etching (microfabrication) Hardware_INTEGRATEDCIRCUITS Optoelectronics Deposition (phase transition) Microelectronics Wafer business |
| Zdroj: | Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series, Vol.6 (IEEE Cat. No.98CH36178). |
| DOI: | 10.1109/cleo.1998.676278 |
| Popis: | Summary form only given. Real-time sensors capable of process and wafer state monitoring are key enablers in monitoring and control of microelectronic manufacturing processes. In single wafer manufacturing environments, different device and process flows are interspersed through common chambers; hence, each wafer must serve as "its own pilot". Also increasing the need for real time monitoring is the progression to smaller feature sizes and thinner limiting film thicknesses thus requiring tighter control of wafer tolerances. In this work we will describe the development and implementation of a high speed spectral ellipsometer sensor capable of real-time in situ wafer state diagnostics and control during deposition and etching of microelectronic materials. |
| Databáze: | OpenAIRE |
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