Structure optimization of InGaN–GaN ultraviolet light-emitting diode with a low-energy electron injection mechanism
| Autor: | Kyoung Chan Kim, Suk Ho Yoon, Cheol Soo Sone, Yong Jo Park, Jeoung Wook Lee, Tae Geun Kim, Dong Ho Kim |
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| Rok vydání: | 2004 |
| Předmět: |
Indium nitride
business.industry Gallium nitride Condensed Matter Physics medicine.disease_cause law.invention Inorganic Chemistry chemistry.chemical_compound Optics chemistry law Materials Chemistry medicine Ultraviolet light Optoelectronics Thin film business Ultraviolet Quantum tunnelling Diode Light-emitting diode |
| Zdroj: | Journal of Crystal Growth. 272:264-269 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2004.08.100 |
| Popis: | We propose a way of increasing overall efficiency of InGaN–GaN ultraviolet light-emitting diodes (UV LEDs) by placing a thin Si-doped AlGaN layer beneath the multiple quantum well (MQW). The AlGaN thin layer plays a role of tunneling barrier for the electrons, making a low-energy electron injection possible. The effect of the AlGaN thin film is verified by the simulation regarding the carrier distributions. By using this idea, the overall efficiency of the UV LED is enhanced by 13.5% over that of the conventional UV LEDs. |
| Databáze: | OpenAIRE |
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