Suppression of the Carbon Vacancy Traps and the Corresponding Leakage Current Reduction in 4H-SiC Diodes by Low-Temperature Implant Activation in Combination With Oxidation

Autor:	Tianxiang Lin, Si-Hua Li, Lok-Ping Ho, Andrej Kuznetsov, Ho Nam Lee, Tony Chau, Francis Chi-Chung Ling
Rok vydání:	2023
Předmět:	Electrical and Electronic Engineering Electronic Optical and Magnetic Materials
Zdroj:	IEEE Electron Device Letters. 44:578-581
ISSN:	1558-0563 0741-3106
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ffa15e3c870421bd8a63525dabac31ee https://doi.org/10.1109/led.2023.3242296 Zobrazit plný text záznamu