Mapping of n-GaN Schottky contacts formed on facet-growth substrates using near-ultraviolet scanning internal photoemission microscopy

Autor:	Kaori Kurihara, Masataka Maeda, Kenji Shiojima
Rok vydání:	2021
Předmět:	Facet (geometry) Materials science business.industry Photoemission microscopy Schottky barrier Materials Chemistry Optoelectronics Schottky diode Electrical and Electronic Engineering Near ultraviolet Condensed Matter Physics business Electronic Optical and Magnetic Materials
Zdroj:	Semiconductor Science and Technology.
ISSN:	1361-6641 0268-1242
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ff910fd91a53d5b04732e3d32307be76 https://doi.org/10.1088/1361-6641/abdd09 Zobrazit plný text záznamu