Access Time and Power Dissipation of a Model 256-Bit Single Flux Quantum RAM
| Autor: | Theodore Van Duzer, Thomas Ortlepp |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Dynamic random-access memory
Flat memory model Sense amplifier Computer science Semiconductor memory Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention law Electronic engineering Interleaved memory Non-volatile random-access memory Electrical and Electronic Engineering Memory refresh Computer memory |
| Zdroj: | IEEE Transactions on Applied Superconductivity. 24:1-7 |
| ISSN: | 1558-2515 1051-8223 |
| DOI: | 10.1109/tasc.2014.2318309 |
| Popis: | Superconductor electronics offers logic circuits for high-speed data processing and high-performance computing. The main barrier to practical application is the lack of high-speed and low-power memory. It is widely believed that the most reliable and functional bit cell for superconducting memory is the vortex transitional bit cell, which was successfully used by Nagasawa in a 4-kb memory. This paper reviews existing challenges in this type of Josephson memory devices and discusses engineering issues in implementing a model single flux quantum random access memory. We evaluate the contributions that various components of the memory system make to delay and power dissipation. The 256-bit memory provides an experimentally confirmed read access time of 190 ps. As a result, we found that delay and power dissipation are found largely in the address decoder, line drivers, bit-selection scheme, and the data readout circuitry. With these circuits being similar for various magnetic memory devices, our findings provide essential data for a comprehensive assessment of new concepts for bit cells, readout, and write in superconducting memories. |
| Databáze: | OpenAIRE |
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