Total Ionizing Dose (TID) Effects in GaAs MOSFETs With La-Based Epitaxial Gate Dielectrics
| Autor: | Xin Wan, Mengwei Si, Roy G. Gordon, Peide D. Ye, Kai Ni, Xian Gong, Xiabing Lou, Shufeng Ren, Tso-Ping Ma, Robert A. Reed, Rong Jiang, Maruf A. Bhuiyan, Jingyun Zhang, Daniel M. Fleetwood, En Xia Zhang |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Nuclear and High Energy Physics Materials science 010308 nuclear & particles physics business.industry Transconductance Gate dielectric Substrate (electronics) Electron Dielectric Epitaxy 01 natural sciences Gallium arsenide chemistry.chemical_compound Nuclear Energy and Engineering chemistry 0103 physical sciences MOSFET Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Nuclear Science. 64:164-169 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/tns.2016.2620993 |
| Popis: | Epitaxially grown La-based oxide has shown promise as a gate dielectric for GaAs substrate materials with a low interface trap density in the mid to low $10^{11}$ cm $^{\mathrm {-2}}$ eV $^{\mathrm {-1}}$ range. Total ionizing dose (TID) effects have been studied on GaAs MOSFETs with Al2O3/La2O3 and Al2O3/La1.8Y0.2O3 gate oxides. Charge trapping mechanisms in GaAs MOSFETs are studied by the AC transconductance dispersion method. Al2O3/La2O3 gated devices show a combination of electron and hole trapping, whereas Al2O3/La1.8Y0.2O3 gated devices show primarily hole trapping. |
| Databáze: | OpenAIRE |
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