Study of Al0.22Ga0.78As/In0.18Ga0.82As/GaAs PHEMT with delta doping and lower Al mole fraction
Autor: | Anumita Sengupta, Manisha Guduri, Aminul Islam, Kumar Ankit, Om Prakash, Rohan Kumar |
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Rok vydání: | 2017 |
Předmět: |
010302 applied physics
Materials science Transconductance Delta doping Analytical chemistry 02 engineering and technology High-electron-mobility transistor 021001 nanoscience & nanotechnology Mole fraction 01 natural sciences Subthreshold slope Cutoff frequency Threshold voltage 0103 physical sciences Breakdown voltage 0210 nano-technology |
Zdroj: | 2017 International Conference on Multimedia, Signal Processing and Communication Technologies (IMPACT). |
DOI: | 10.1109/mspct.2017.8363987 |
Popis: | In this paper, DC and RF performance of a pseudomorphic high electron mobility transistor (PHEMT) with an Al 0.22 Ga 0.78 As supply layer, In 0.18 Ga 0.82 As channel layer built on a p-type GaAs, with a delta doping of thickness 1 nm has been analyzed. Analysis are carried out to obtain output characteristics curve (I d -V ds ), transfer characteristics curve (I d -V gs ), threshold voltage (from the I d -V DS plot), breakdown voltage (from the I d -V ds plot), transconductance, subthreshold slope and unity current gain cut off frequency (fT) of the. The simulated structure exhibits an transconductance of 525 mS/mm (1.1 × improvement compared to existing structure), threshold voltage Vt= −1.4 V at V ds = 6 V, maximum drain current current (I d ) of about 596 mA/mm at V gs = 0 V (1.2 × improvement) and fT of 3.1 GHz. All simulations are performed using Silvaco ATLASTM. |
Databáze: | OpenAIRE |
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