Buffer-facilitated epitaxial growth of AlN on Al2O3(0001) at room temperature

Autor:	Yan-Ru Lin, Shinn-Tyan Wu
Rok vydání:	2002
Předmět:	Aluminium oxides Materials science business.industry Surfaces and Interfaces Sputter deposition Nitride Condensed Matter Physics Epitaxy Surfaces Coatings and Films Crystallography Transmission electron microscopy Materials Chemistry Sapphire Optoelectronics business Layer (electronics) Nitriding
Zdroj:	Surface Science. 516:L535-L539
ISSN:	0039-6028
DOI:	10.1016/s0039-6028(02)01974-x
Popis:	Aluminum nitride (AlN) was deposited on Al2O3(0 0 0 1) by direct current magnetron sputtering. It was discovered that the nitride could grow epitaxially near room temperature. A FWHM of 2° was obtained from X-ray rocking curve. A thin compliant buffer of aluminum (Al) was sandwiched between nitride and sapphire. The buffer layer was nitrided before the commencement of AlN deposition. Both electron and X-ray diffraction data are used to support our contention.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ff7a96481838be1b74d9c8d686f28b05 https://doi.org/10.1016/s0039-6028(02)01974-x Zobrazit plný text záznamu Full Text from ScienceDirect